3D Integration for NoC-based SoC Architectures by Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot, PDF

By Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot, Axel Jantsch (eds.)

ISBN-10: 1441976175

ISBN-13: 9781441976178

Back conceal replica sequence: built-in Circuits and structures 3D-Integration for NoC-based SoC Architectures via: (Editors) Abbas Sheibanyrad Frédéric Petrot Axel Janstch This publication investigates at the supplies, demanding situations, and recommendations for the 3D Integration (vertically stacking) of embedded structures attached through a community on a chip. It covers the full architectural layout procedure for 3D-SoCs. 3D-Integration applied sciences, 3D-Design recommendations, and 3D-Architectures have emerged as issues severe for present R&D resulting in a wide diversity of goods. This booklet offers a accomplished, system-level evaluation of three-d architectures and micro-architectures. •Presents a complete, system-level assessment of 3-dimensional architectures and micro-architectures; •Covers the complete architectural layout method for 3D-SoCs; •Includes cutting-edge therapy of 3D-Integration applied sciences, 3D-Design concepts, and 3D-Architectures.

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All wafers received a 10€min piranha (H2O2:H2SO4â•›=â•›1:3, by volume) solution clean followed by deionized water rinse and spin-dry prior to metallization. The next step was the deposition of Tantalum (50€nm) and Copper (300€nm) in an e-beam deposition system. Ta was used to prevent Cu out-diffusion into the oxide layer. Chamber pressure during metal deposition was 1â•›×â•›10−6€Torr. 99€nm from AFM scan. A pair of wafers was aligned face-to-face in wafer aligner and clamped together on a bonding chuck.

The energy is calculated for a single transaction from one layer to the next adjacent layer, so the hop length is fixed. Driver and receiver energy is also considered, however no repeaters are required for the 3-D interconnect. The TSVs are arranged in a row, thus the total area of the interconnect is a straightforward relationship to the pitch and radius of the TSVs. 3 Logical Operation and DRAM Scaling We extract the energy per operation of several logic operations such as a 32-bit addition or SRAM read, by using published data [15, 16] for a particular technology node and scaling the energy and area for future or past generations.

Reif, Wafer Level 3-D ICs Process Technology, Springer, New York, ISBN 978-0-387-76532-7, 2008. 23. P. Garrou, C. Bower, and P. Ramm, Handbook of 3D Integrations: Technology and Applications of 3D Integrated Circuits, Wiley-VCH, Weinheim, ISBN 978-3-527-32034-9, 2008. 24. A. Fan, A. Rahman, and R. Reif, Copper Wafer Bonding. Electrochemical and Solid-State Letters, 2(10), pp. 534–536, 1999. 26 C. S. Tan 25. R. Tadepalli, and Carl V. Thompson, Quantitative Characterization and Process Optimization of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits.

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3D Integration for NoC-based SoC Architectures by Chuan Seng Tan (auth.), Abbas Sheibanyrad, Frédéric Pétrot, Axel Jantsch (eds.)

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